aot270l/AOB270L 75v n-channel mosfet v ds i d (at v gs =10v) 140a r ds(on) (at v gs =10v) < 2.6m w (< 2.3m w * ) r ds(on) (at v gs =6v) < 3.0m w (< 2.8m w * ) symbol the aot270l/AOB270L uses trench mosfet technology that is uniquely optimized to provide th e most efficient high frequency switching performance. bot h conduction and switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss. this device is ideal for boost converters and synch ronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 75v g d s v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc * surface mount package to263 maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.25 60 0.3 power dissipation a p dsm w t a =70c 500 1.3 t a =25c continuous drain current 720 21.5 avalanche energy l=0.1mh c i dsm w a t a =70c mj avalanche current c continuous drain current g i d 140 110 t c =25c t c =100c v drain-source voltage 75 17 a 120 v 20 gate-source voltage a t a =25c 560 pulsed drain current c c thermal characteristics units maximum junction-to-ambient a c/w r q ja 12 50 15 parameter typ max t c =25c 2.1 250 t c =100c junction and storage temperature range -55 to 175 power dissipation b p d www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 75 v v ds =75v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2 2.5 3 v i d(on) 560 a 2.1 2.6 t j =125c 3.3 4.2 to220 v gs =10v, i d =20a 1.9 2.3 to263 t j =125c 3.1 3.9 v gs =6v, i d =20a to263 g fs 80 s v sd 0.66 1 v i s 140 a c iss 10350 pf c oss 1560 pf c rss 90 pf r g 0.4 0.9 1.4 w q 153 215 nc r ds(on) static drain-source on-resistance drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v switching parameters i dss m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =v gs i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage v gs =10v, i d =20a maximum body-diode continuous current g to220 i s =1a,v gs =0v v ds =5v, i d =20a 2.8 2.2 m w input capacitance output capacitance v gs =0v, v ds =37.5v, f=1mhz dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz 2.4 3 total gate charge v gs =6v, i d =20a reverse transfer capacitance q g 153 215 nc q gs 33 nc q gd 35 nc t d(on) 30 ns t r 24 ns t d(off) 80 ns t f 32 ns t rr 45 ns q rr 330 nc body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on delaytime i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =37.5v, r l =1.9 w , r gen =3 w turn-off fall time total gate charge v gs =10v, v ds =37.5v, i d =20a gate source charge gate drain charge a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package is 140a. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/6 aot270l/AOB270L 75v n-channel mosfet
typical electrical and thermal characteristics 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 6v 8v 10v vgs=3v 4v v gs =6v i d =20a v gs =6v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 1 2 3 4 5 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/6 aot270l/AOB270L 75v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 30 60 90 120 150 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2000 4000 6000 8000 10000 12000 0 25 50 75 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 1000 2000 3000 4000 5000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- c oss c rss v ds =37.5v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =0.3 c/w t on t p d www.freescale.net.cn 4/6 aot270l/AOB270L 75v n-channel mosfet
typical electrical and thermal characteristics 0 100 200 300 400 500 600 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 30 60 90 120 150 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 14: current de - rating (note f) 1 10 100 1000 10000 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =60 c/w www.freescale.net.cn 5/6 aot270l/AOB270L 75v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 6/6 aot270l/AOB270L 75v n-channel mosfet
|
